View MMBR5711LT1_8282704.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 mmbr571lt1 mrf571 mrf5711lt1 motorola rf device data the rf line designed for low noise, wide dynamic range frontend amplifiers and lownoise vco's. available in a surfacemountable plastic packages. this motorola series of smallsignal plastic transistors offers superior quality and performance at low cost. ? high gainbandwidth product f t = 8.0 ghz (typ) @ 50 ma ? low noise figure nf min = 1.6 db (typ) @ f = 1.0 ghz (mrf5711lt1, mrf571) ? high gain g nf = 17 db (typ) @ 30 ma/500 mhz (mmbr571lt1) ? high power gain g pe (matched) = 13.5 db (typ) (mrf5711lt1) ? stateoftheart technology fine line geometry ionimplanted arsenic emitters gold top metallization and wires silicon nitride passivation ? available in tape and reel packaging options: t1 suffix = 3,000 units per reel maximum ratings rating symbol value unit collectoremitter voltage v ceo 10 vdc collectorbase voltage v cbo 20 vdc emitterbase voltage v ebo 3.0 vdc collector current e continuous i c 80 ma total device dissipation @ t case = 75 c mmbr571lt1, mrf5711lt1 derate linearly above t case = 75 c @ p d(max) 0.33 4.44 w mw/ c total device dissipation (1) @ t c = 75 c derate above 75 c mrf571 p d 0.58 7.73 watts mw/ c operating and storage temperature t stg 55 to +150 c thermal characteristics rating symbol max unit thermal resistance, junction to case mrf5711lt1, mmbr571lt1 r q jc 225 c/w thermal resistance, junction to case mrf571 r q jc 130 c/w maximum junction temperature t jmax 150 c device marking mmbr571lt1 = 7x mrf5711lt1 = 02 note: 1. case temperature measured on collector lead immediately adjacent to body of package. order this document by mmbr571lt1/d
semiconductor technical data

i c = 80 ma low noise highfrequency transistors case 31808, style 6 sot23 low profile mmbr571lt1 case 318a05, style 1 sot143 low profile mrf5711lt1 case 31701, style 2 macrox mrf571 ? motorola, inc. 1997 rev 8
mmbr571lt1 mrf571 mrf5711lt1 2 motorola rf device data electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage (i c = 1.0 ma, i b = 0) v (br)ceo 10 12 e vdc collectorbase breakdown voltage (i c = 0.1 ma, i e = 0) v (br)cbo 20 e e vdc emitterbase breakdown voltage (i e = 50 m adc, i c = 0) v (br)ebo 2.5 e e vdc collector cutoff current (v cb = 8.0 vdc, i e = 0) i cbo e e 10 m adc on characteristics dc current gain (i c = 30 madc, v ce = 5.0 vdc) h fe 50 e 300 e dynamic characteristics collectorbase capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) mmbr 571lt1 (v cb = 6.0 vdc, i e = 0, f = 1.0 mhz) mrf5711lt1, mrf571 c cb e e 0.7 0.75 1.0 1.0 pf current gainbandwidth produc (v ce = 5.0 vdc, i c = 50 madc, f = 1.0 ghz) mmbr571lt1 (v ce = 8.0 vdc, i c = 50 madc, f = 1.0 ghz) mrf5711lt1, mrf571 f t e e 8.0 8.0 e e ghz functional tests gain @ noise figure mrf571 f = 0.5 ghz (i c = 10 madc, v ce = 6.0 vdc) mrf571 f = 1.0 ghz g nf e 10 16.5 12 e e db noise figure mrf571 f = 0.5 ghz (i c = 10 madc, v ce = 6.0 vdc) mrf571 f = 1.0 ghz f = 2.0 ghz nf e e e 1.0 1.5 2.8 e 2.0 e db gain @ noise figure (i c = 10 madc, v ce = 5.0 vdc) mmbr571lt1 f = 0.5 ghz f = 1.0 ghz (i c = 10 ma, v ce = 6.0 vdc) mrf5711lt1 f = 1.0 ghz g nf e e e 16.5 10.5 13.5 e e e db noise figure (i c = 10 madc, v ce = 5.0 vdc) mmbr571lt1 f = 0.5 ghz f = 1.0 ghz (i c = 10 madc, v ce = 6.0 vdc) mrf5711lt1 f = 1.0 ghz nf e e e 2.0 2.6 2.2 e e e db noise figure (v ce = 6.0 v, i c = 10 ma, f = 1.0 ghz) mrf5711lt1 nf min e 1.6 e db power gain in 50 w system (v ce = 6.0 v, i c = 10 ma, f = 1.0 ghz) mrf5711lt1 |s 21 | 2 9.0 10 e db figure 1. maximum available gain versus frequency figure 2. current gainbandwidth versus collector current @ 1.0 ghz 25 20 15 10 5 0 0.4 0.6 1 2 3 f, frequency (ghz) g a max, maximum available gain (db) v ce = 5 v i c = 30 ma g a max | s 21 | |s 12 | (k (k 2 1) ), k 1 10 8 6 4 2 0 0 i c , collector current (ma) f t , current gain-bandwidth product (ghz) 10 20 30 40 50 60 70 80 90 100 v ce = 5 v f = 1 ghz typical characteristics mmbr571lt1
3 mmbr571lt1 mrf571 mrf5711lt1 motorola rf device data figure 3. input capacitance versus emitter base voltage sot23 mmbr571lt1 sot23 mmbr571lt1 sot23 mmbr571lt1 c ib , input capacitance (pf) v be , baseemitter voltage (vdc) 4 1 3 2 1 23 0 0 f = 1 mhz c ib c cb , output capacitances (pf) , c ob v cb , collectorbase voltage (vdc) 2.5 0 2 1.5 1 0.5 0 12 34 56 78 910 c ob c cb f = 1 mhz g nf , gain at noise figure (db) 0 i c , collector current (ma) 20 16 12 8 4 0 10 20 30 40 50 f = 500 mhz v ce = 5 v typical characteristics mmbr571lt1 figure 4. output capacitances versus collectorbase voltage figure 5. gain at noise figure versus collector current 1 ghz figure 6. noise figure versus collector current sot23 mmbr571lt1 sot23 mmbr571lt1 sot23 mmbr571lt1 nf, noise figure (db) 0 i c , collector current (ma) 5 4 3 2 1 0 10 20 30 40 50 f = 500 mhz f = 1 ghz v ce = 5 v g nf , gain at noise figure (db) 0.2 f, frequency (ghz) 25 20 15 10 5 0 0.3 0.5 1 1.5 2 nf, noise figure (db) 5 4 3 2 1 0 v ce = 5 v i c = 10 ma g nf nf 25 0.2 f, frequency (ghz) 20 15 10 5 0.3 0.6 1 2 30 1.5 g u max = |s 21 | 2 (1 |s 11 | 2 )(1 |s 22 | 2 ) g u max |s 21 | 2 v ce = 5 v i c = 30 ma g u max and |s 21 | 2 (db) figure 7. gain at noise figure and noise figure versus frequency figure 8. maximum unilateral gain and insertion gain versus frequency
mmbr571lt1 mrf571 mrf5711lt1 4 motorola rf device data figure 9. collectorbase capacitance versus collectorbase voltage figure 10. 50 noise figure versus frequency figure 11. functional circuit schematic *bias tee **slug tuner *bias tee **slug tuner rf output rf input v be v ce = 6 vdc * d.u.t. **microlab/fxr ** sf e 11n < 1 ghz ** sf e 31n > 1 ghz c cb , collector-base capacitance (pf) 2 1.6 1.2 0.8 0.4 0 10 8 6 4 2 0 v cb , collectorbase voltage (volts) 0.15 f, frequency (ghz) 0.2 0.5 1 2 nf, noise figure (db) 5 4 3 2 1 0 f = 1 mhz nf v ce = 6 vdc i c = 5 ma ckt = hp 11608a z o = 50 w g s = g l = 0 *microlab * hwxxn * as applicable typical characteristics mrf5711lt1
5 mmbr571lt1 mrf571 mrf5711lt1 motorola rf device data g nf figure 12. gain and noise figure versus frequency figure 13. gain and noise figure versus collector current figure 14. gain and noise figure versus collector current figure 15. gain bandwidth product versus collector current figure 16. g umax and |s 21 | 2 versus frequency figure 17. insertion gain versus collector current g nf , gain (db) 40 32 0.15 f, frequency (ghz) 0.2 0.5 1 2 nf, noise figure (db) 5 4 3 2 1 0 24 16 8 0 g nf nf v ce = 6 vdc i c = 5 ma ckt = figure 3 g nf , gain (db) 16 i c , collector current (ma) 0 nf, noise figure (db) 4 3 2 1 12 8 4 0 10 20 30 40 50 g nf nf v ce = 6 vdc f = 1 ghz ckt = figure 3 g nf , gain (db) i c , collector current (ma) 0 nf, noise figure (db) 4 3 2 1 24 10 20 30 40 50 18 12 6 0 v ce = 6 vdc f = 500 mhz ckt = figure 3 nf f , gain bandwidth product (ghz) t i c , collector current (ma) 0 10 8 4 0 20 60 40 80 100 6 2 f = 1 ghz v ce = 8 vdc z o = 50 w 40 32 0.15 f, frequency (ghz) 0.2 0.5 1 2 24 16 8 0 |s 21 | 2 , gain (db) g umax and g umax = |s 21 | 2 (1 |s 11 | 2 )(1 |s 22 | 2 ) g umax |s 21 | 2 v ce = 8 vdc i c = 50 ma z o = 50 w |s 21 | 2 , insertion gain (db) 32 24 16 8 0 i c , collector current (ma) 0 1020304050 z o = 50 w v ce = 6 vdc f = 200 mhz 1 ghz 500 mhz typical characteristics mrf5711lt1 2 ghz
mmbr571lt1 mrf571 mrf5711lt1 6 motorola rf device data +j50 +j100 +j150 +j250 +j500 j500 j250 j150 j100 j50 j25 j10 0 +j10 +j25 +90 +120 +150 180 0 150 120 90 60 30 +30 +60 s 11 2 2 1 1.5 1.5 0.5 1 s 22 10 25 50 100 150 250 500 0.5 s 21 0.5 0.5 2 2 1.5 s 12 1 1 1.5 s 21 s 12 0.1 0.2 0.3 14 12 8 6 4 2 10 0.4 f = 0.2 ghz figure 18. input/output reflection coefficients versus frequency v ce = 5.0 v, i c = 30 ma mmbr571lt1 figure 19. forward/reverse transmission coefficients versus frequency v ce = 5.0 v, i c = 30 ma f = 0.2 ghz f = 0.2 ghz f = 0.2 ghz v ce i c f s 11 s 21 s 12 s 22 v ce (volts) i c (ma) f (mhz) |s 11 | f |s 21 | f |s 12 | f |s 22 | f 5.0 5.0 200 500 1000 1500 2000 0.68 0.52 0.50 0.51 0.52 82 142 179 161 143 8.41 4.62 2.57 1.82 1.48 126 93 72 57 45 0.07 0.10 0.14 0.19 0.24 53 46 53 58 59 0.61 0.35 0.26 0.24 0.22 45 60 71 77 86 15 200 500 1000 1500 2000 0.46 0.43 0.44 0.45 0.46 125 169 168 152 137 13.65 6.03 3.20 2.21 1.80 108 86 72 58 48 0.05 0.09 0.16 0.22 0.29 60 66 67 64 59 0.35 0.17 0.14 0.11 0.10 73 94 111 118 131 30 200 500 1000 1500 2000 0.42 0.41 0.42 0.44 0.44 148 177 165 151 135 14.79 6.31 3.35 2.29 1.84 102 84 71 59 48 0.04 0.09 0.16 0.23 0.30 68 72 70 65 60 0.26 0.14 0.12 0.11 0.10 87 115 135 144 157 50 200 500 1000 1500 2000 0.41 0.42 0.43 0.44 0.45 159 179 163 148 134 15.14 6.38 3.35 2.32 1.84 98 83 70 58 48 0.04 0.09 0.16 0.23 0.30 73 75 71 66 60 0.21 0.13 0.12 0.10 0.09 96 124 143 151 163 table 1. mmbr571lt1 common emitter sparameters
7 mmbr571lt1 mrf571 mrf5711lt1 motorola rf device data figure 20. mrf5711lt1 constant gain and noise figure contours (f = 0.5 ghz) figure 21. mrf5711lt1 constant gain and noise figure contours (f = 1.0 ghz) g ms nf opt 0.36 104 rn 7 k 0.63 f (ghz) 0.5 nf opt 1.20 db v ce = 5 v i c = 10 ma = area of instability j1.0 j2.0 j0.5 j0.2 j0.2 j0.5 j1.0 j2.0 1.2 19 18 17 1.6 1.8 1.4 20.4 0.2 0.5 1.0 2.0 g ms nf opt 0.20 162 rn 8 k 0.94 f (ghz) 1.0 nf opt 1.70 db 0.2 0.5 1.0 2.0 j1.0 j2.0 j0.5 j0.2 j0.2 j0.5 j1.0 j2.0 v ce = 5 v i c = 10 ma = area of instability 1.7 1.9 2.1 2.3 6.4 15 14
mmbr571lt1 mrf571 mrf5711lt1 8 motorola rf device data v ce i c f s 11 s 21 s 12 s 22 v ce (vdc) i c (ma) f (mhz) |s 11 | f |s 21 | f |s 12 | f |s 22 | f 6.0 5.0 200 500 1000 1500 2000 0.79 0.72 0.69 0.66 0.65 90 144 177 164 147 10.9 5.7 3.0 2.0 1.6 128 96 75 59 47 0.06 0.08 0.09 0.10 0.12 46 28 28 32 38 0.70 0.42 0.31 0.34 0.32 45 66 77 89 94 10 200 500 1000 1500 2000 0.72 0.69 0.67 0.64 0.64 115 160 174 159 143 15.2 6.9 3.6 2.4 1.8 118 92 74 60 49 0.05 0.06 0.08 0.10 0.12 41 34 42 46 50 0.55 0.30 0.21 0.23 0.20 66 92 108 114 116 50 200 500 1000 1500 2000 0.67 0.67 0.66 0.63 0.58 159 179 174 151 138 20 8.2 3.8 2.7 2.1 102 85 72 61 51 0.02 0.04 0.07 0.10 0.14 48 58 65 64 62 0.33 0.33 0.21 0.22 0.17 111 142 158 158 165 8.0 5.0 200 500 1000 1500 2000 0.80 0.72 0.70 0.66 0.61 87 141 177 166 149 11.1 5.9 3.1 2.1 1.6 130 97 75 60 47 0.06 0.08 0.09 0.10 0.12 47 30 28 32 39 0.71 0.44 0.33 0.35 0.35 42 60 68 80 85 10 200 500 1000 1500 2000 0.72 0.68 0.66 0.64 0.60 113 159 175 160 144 15.6 7.2 3.7 2.5 2.0 119 92 74 61 49 0.05 0.06 0.08 0.09 0.13 42 34 41 47 50 0.56 0.31 0.21 0.23 0.21 61 82 92 101 103 50 200 500 1000 1500 2000 0.66 0.65 0.64 0.61 0.58 156 179 164 153 137 20.9 8.6 4.3 2.9 2.3 103 85 72 61 51 0.02 0.04 0.07 0.10 0.13 48 58 65 65 64 0.31 0.19 0.16 0.17 0.14 101 128 144 142 145 table 2. mrf5711lt1 common emitter sparameters
9 mmbr571lt1 mrf571 mrf5711lt1 motorola rf device data g nf , gain at noise figure (db) figure 22. c cb , collectorbase capacitance versus voltage figure 23. c ib , input capacitance versus emitter base voltage figure 24. gain at noise figure and noise figure versus frequency c cb , collector-base capacitance (pf) 1.25 1 0.75 0.5 0.25 0 10 9 8 7 6 5 4 3 2 1 0 v cb , collectorbase voltage (vdc) g nf nf f = 1 mhz c ib , input capacitance (pf) 1 3 2 1 0 v be , baseemitter voltage (vdc) 0 2 f = 1 mhz g nf , gain at noise figure (db) 30 0.2 0.15 f, frequency (ghz) 0.3 0.6 1 1.5 2 3 25 20 15 10 0 nf, noise figure (db) 5 4 3 2 1 0 v ce = 6 v i c = 5 ma figure 25. gain at noise figure and noise figure versus collector current g nf @ 500 mhz nf @ 1 ghz 10 0 20 10 0 nf, noise figure (db) 5 4 3 2 1 0 v ce = 6 v 20 30 40 50 i c , collector current (ma) g nf @ 1 ghz nf @ 500 mhz typical characteristics mrf571
mmbr571lt1 mrf571 mrf5711lt1 10 motorola rf device data figure 26. f t , current gainbandwidth product versus collector current figure 27. g amax , maximum available gain versus frequency figure 28. 1.0 db compression point and third order intercept figure 29. g u max and |s 21 | 2 versus frequency f , current gain-bandwidth product (ghz) t 10 0 10 20 30 40 50 i c , collector current (ma) 8 6 4 2 0 60 70 80 90 100 f = 1 ghz v ce = 5 vdc 8 vdc g a max, maximum available gain (db) 0.6 0.4 30 f, frequency (ghz) 123 27 24 21 18 15 12 9 6 3 0 v ce = 8 v i c = 50 ma g amax = |s 21 | |s 12 | (k k 2 1 ), k 1 p , output power (dbm) out 5 10 +50 p in , input power (dbm) +40 +30 +20 +10 +5 0 + 5 +10 +15 + 2 0 +25 +30 +35 +40 comp. pt. v cc = 8 vdc i c = 50 ma f = 500 mhz 1000 mhz 3rd order intercept 3rd order products 30 0.2 0.15 f, frequency (ghz) 0.3 0.6 1 1.5 2 3 25 20 15 10 5 g u max and |s 21 | 2 gain (db) |s 21 | 2 g u max v ce = 8 v i c = 50 ma g umax = |s 21 | 2 (1 |s 11 | 2 )(1 |s 22 | 2 ) 1 db 0 typical characteristics mrf571
11 mmbr571lt1 mrf571 mrf5711lt1 motorola rf device data figure 30. input/output reflection coefficients versus frequency (ghz) v ce = 6.0 v, i c = 5.0 ma figure 31. forward/reverse transmission coefficients versus frequency (ghz) v ce = 6.0 v, i c = 5.0 ma + j50 + j100 + j150 + j250 + j500 j500 j250 j150 j100 j50 j25 j10 0 + j10 + j25 25 50 150 250 500 10 2 1.5 1 0.5 2 1.5 1 0.5 s 11 +90 +60 +30 0 30 60 90 120 150 180 +150 +120 +105 +135 +165 165 135 105 75 45 15 +15 +45 +75 12 10 8 6 4 2 s 21 s 21 s 12 0.5 0.5 1 1.5 1.5 2 1 s 12 s 22 100 2 0.1 f = 0.2 ghz f = 0.2 ghz f = 0.2 ghz f = 0.2 ghz mrf571 v ce i c f s 11 s 21 s 12 s 22 v ce (volts) i c (ma) f (mhz) |s 11 | f |s 21 | f |s 12 | f |s 22 | f 6.0 5 200 500 1000 1500 2000 0.74 0.62 0.61 0.65 0.70 86 143 178 158 140 10.5 5.5 3.0 2.0 1.6 129 97 78 62 51 0.06 0.08 0.09 0.11 0.14 48 33 37 44 51 0.69 0.41 0.28 0.26 0.27 42 59 69 88 99 10 200 500 1000 1500 2000 0.64 0.58 0.59 0.63 0.67 111 160 168 151 134 15 6.9 3.7 2.5 2.0 118 93 77 64 53 0.04 0.06 0.09 0.12 0.16 44 42 52 56 57 0.53 0.27 0.16 0.16 0.16 59 77 91 113 118 50 200 500 1000 1500 2000 0.56 0.57 0.60 0.62 0.66 160 176 156 152 127 20.4 8.4 4.4 2.9 2.4 102 86 75 64 53 0.02 0.05 0.09 0.13 0.18 57 67 70 68 62 0.27 0.14 0.11 0.13 0.11 98 130 164 175 178 8.0 5 200 500 1000 1500 2000 0.75 0.62 0.60 0.64 0.69 83 140 179 159 141 10.7 5.1 3.7 2.1 1.7 129 98 78 62 52 0.06 0.08 0.09 0.10 0.13 49 34 38 45 52 0.71 0.43 0.31 0.29 0.29 39 54 62 80 91 10 200 500 1000 1500 2000 0.64 0.52 0.52 0.52 0.57 99 152 170 150 133 15.1 7.1 3.7 2.5 2.0 120 94 76 62 51 0.05 0.07 0.10 0.13 0.18 46 45 54 56 55 0.54 0.32 0.15 0.16 0.16 60 75 82 108 107 50 200 500 1000 1500 2000 0.52 0.52 0.56 0.54 0.59 153 178 157 139 126 19.6 8.1 4.1 2.8 2.2 102 86 73 62 52 0.03 0.05 0.10 0.13 0.19 56 67 70 68 63 0.28 0.16 0.06 0.11 0.10 92 98 130 146 137 table 3. mrf571 common emitter sparameters
mmbr571lt1 mrf571 mrf5711lt1 12 motorola rf device data figure 32. mrf571 constant gain and noise figure contours v ce = 6.0 v, i c = 5.0 ma f = 500 mhz e region of instability f (ghz) nf opt (db) rn ( w ) nf50 w (db) 0.5 0.9 9.3 1.3 g ms nf opt k 0.49 74 0.58 v ce = 6.0 v, i c = 5.0 ma f = 1.0 ghz f (ghz) nf opt (db) rn ( w ) nf50 w (db) 1.0 1.5 7.5 2.2 g ms 0.89 179 g ms nf opt 0.48 134 g ml 0.81 66 + j50 + j100 + j150 + j250 + j500 j250 j150 j100 j50 j25 j10 0 + j10 + j25 j500 25 50 250 10 500 150 17 16 0.9 1 100 g ms nf opt 18 1.5 2 + j50 + j100 + j150 + j250 + j500 j250 j150 j100 j50 j25 j10 0 + j10 + j25 j500 25 50 250 10 500 150 100 3 2 2.5 1.5 g ms nf opt 10 12 14 g ms
13 mmbr571lt1 mrf571 mrf5711lt1 motorola rf device data figure 33. mrf571 test circuit schematic r1 fb c1, c4, c5, c6, c8, c9 e 100 pf chip capacitor c2, c3 e 0.8 8.0 pf johanson capacitor c7, c10 e 10 m f tantalum capacitor r1 e 1.0 kohms res. rfc e vk200, ferroxcube fb e ferrite bead, ferroxcube 5659065/3b board material e 0.0625 glass teflon, e r = 2.55 tl1, tl7, tl8 e microstrip 0.162 x 0.600 tl2 e microstrip 0.162 x 1.060 tl3 e microstrip 0.162 x 0.700 tl4, tl5 e microstrip 0.162 x 0.440 tl6 e microstrip 0.162 x 1.140 tl8, tl9 e microstrip 0.020 x 2.130 rfc rfc v bb v cc c7 c8 c9 c10 fb c6 c5 tl9 tl10 tl1 c 1 tl2 tl3 tl4 tl5 tl6 tl7 c 4 tl8 rf input rf output d.u.t. c2 c3
mmbr571lt1 mrf571 mrf5711lt1 14 motorola rf device data package dimensions case 31808 issue af mmbr571lt1 d j k l a c b s h g v 3 1 2 dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maxiumum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. style 6: pin 1. base 2. emitter 3. collector case 31701 issue e mrf571 notes: 1. dimension d not applicable in zone n. style 2: pin 1. collector 2. emitter 3. base 4. emitter 3 1 42 seating plane l k d a n g f c 4 pl dim min max min max inches millimeters a 4.44 5.21 0.175 0.205 c 1.90 2.54 0.075 0.100 d 0.84 0.99 0.033 0.039 f 0.20 0.30 0.080 0.012 g 0.76 1.14 0.030 0.045 k 7.24 8.13 0.285 0.320 l 10.54 11.43 0.415 0.450 n 1.65 0.065
15 mmbr571lt1 mrf571 mrf5711lt1 motorola rf device data case 318a05 issue r mrf5711lt1 style 1: pin 1. collector 2. emitter 3. emitter 4. base dim a min max min max inches 2.80 3.04 0.110 0.120 millimeters b 1.20 1.39 0.047 0.055 c 0.84 1.14 0.033 0.045 d 0.39 0.50 0.015 0.020 f 0.79 0.93 0.031 0.037 g 1.78 2.03 0.070 0.080 h 0.013 0.10 0.0005 0.004 j 0.08 0.15 0.003 0.006 k 0.46 0.60 0.018 0.024 l 0.445 0.60 0.0175 0.024 r 0.72 0.83 0.028 0.033 s 2.11 2.48 0.083 0.098 notes: 4. dimensioning and tolerancing per ansi y14.5m, 1982. 5. controlling dimension: millimeter. g s r c j a l f d b 1 34 2 h k
mmbr571lt1 mrf571 mrf5711lt1 16 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.: spd, strategic planning office, 4321, p.o. box 5405, denver, colorado 80217. 3036752140 or 18004412447 nishigotanda, shinagawaku, tokyo 141, japan. 81354878488 mfax ? : rmfax0@email.sps.mot.com touchtone 6 022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 internet : http://motorola.com/sps mmbr571lt1/d ?

▲Up To Search▲

Price & Availability of MMBR5711LT1

	To Download MMBR5711LT1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .